2 p a1750 electrical characteristics (t a = 25 ?c, all terminals are connected.) characteristics symbol test conditions min. typ. max. unit drain to source on-state resistance r ds(on)1 v gs = ?0 v, i d = ?.8 a 0.065 0.090 ? r ds(on)2 v gs = ? v, i d = ?.8 a 0.125 0.180 ? gate to source cutoff voltage v gs(off) v ds = ?0 v, i d = ? ma ?.0 ?.7 ?.5 v forward transfer admittance | y fs |v ds = ?0 v, i d = ?.8 a 2.0 4.4 s drain leakage current i dss v ds = ?0 v, v gs = 0 ?0 a gate to source leakage current i gss v gs = 20 v, v ds = 0 10 a input capacitance c iss v ds = ?0 v 540 pf output capacitance c oss v gs = 0 385 pf reverse transfer capacitance c rss f = 1 mhz 105 pf turn-on delay time t d(on) i d = ?.8 a 10 ns rise time t r v gs(on) = ?0 v 110 ns turn-off delay time t d(off) v dd = ?0 v 340 ns fall time t f r g = 10 ? 230 ns total gate charge q g i d = ?.5 a 18 nc gate to source charge q gs v dd = ?6 v 2.0 nc gate to drain charge q gd v gs = ?0 v 5.1 nc body diode forward voltage v f(s-d) i f = 3.5 a, v gs = 0 0.8 v reverse recovery time t rr i f = 3.5 a, v gs = 0 160 ns reverse recovery charge q rr di/dt = 100 a/ s 310 nc test circuit 1 switching time test circuit 2 gate charge pg. r g 0 v gs d.u.t. r l v dd t = 1 s
duty cycle 1 % v gs wave form i d wave form v gs 10 % 90 % v gs(on) 10 % 0 i d 90 % 90 % t d(on) t r t d(off) t f 10 % t r g = 10 ?
i d 0 t on t off pg. 50 ?
d.u.t. r l v dd i g = 2 ma
3 p a1750 forward bias safe operating area v ds - drain to source voltage - v i c - drain current - a drain current vs. drain to source voltage v ds - drain to source voltage - v i d - drain current - a forward transfer characteristics v gs - gate to source voltage - v i d - drain current - a ?.01 derating factor of forward bias safe operating area t a - ambient temperature - ?c dt - percentage of rated power - % total power dissipation vs. ambient temperature t a - ambient temperature - ?c p t - total power dissipation - w 0 20 0 20 40 60 80 100 120 140 160 20 40 60 80 100 40 60 80 100 120 140 160 2.8 2.4 2.0 1.6 1.2 0.8 0.4 ?.1 ?.1 ? ?0 ?00 ? ?0 ?00 t a = 25 ?c single pulse 0 ?0 ?5 ?0 ?.1 ? ?0 pulsed ?0 ? 0 pulsed ? ? t a = ?5 ?c 25 ?c 75 ?c 125 ?c mounted on ceramic substrate of 2 000 mm 1.1 mm 2 2 unit 1 unit 1 ms power dissipation limited r ds(on) limited (at v gs = ?0 v) dc 100 ms i d(dc) 10 ms i d(pulse) mounted on ceramic substrate of 2 000 mm 1.1 mm 1 unit 2 ?2 v ds = ?0 v ? ? ? ? ?6 v gs = ?0 v ? v
4 p a1750 transient thermal resistance vs. pulse width pw - pulse width - s r th(t) - transient thermal resistance - ?c/w forward transfer admittance vs. drain current i d - drain current - a | y fs | - forward transfer admittance - s drain to source on-state resistance vs. gate to source voltage v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - ?
0 drain to source on-state resistance vs. drain current gate to source cutoff voltage vs. channel temperature t ch - channel temperature - ?c v gs(off) - gate to source cutoff voltage - v i d - drain current - a r ds(on) - drain to source on-state resistance - ?
0.1 ? 10 0.001 0.01 0.1 1 100 1 000 1 m 10 m 100 m 1 10 100 1 000 10 100
v ds = ?0 v pulsed ? 1 10 100 ?0 ?00 0.1 ?0 ?5 pulsed 0.2 ?0 ?00 pulsed 0 ?.5 v ds = ?0 v i d = ? ma ?0 050 100 150 0 ?.1 ?.0 ?.5 ?.0 0.3 0.2 0.3 v gs = ?.0 v t a = ?5 ?c 25 ?c 75 ?c 125 ?c mounted on ceramic substrate of 2000 mm 1.1 mm single pulse , 1 unit 2 ? i d = ?.8 a 0.1 v gs = ?0 v
5 p a1750 drain to source on-state resistance vs. channel temperature t ch - channel temperature - ?c r ds(on) - drain to source on-state resistance - ?
source to drain diode forward voltage v sd - source to drain voltage - v i sd - diode forward current - a capacitance vs. drain to source voltage v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf switching characteristics i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns 1 ?.1 0 ?0 0.05 0 50 100 150 i d = ?.8 a ?.1 0 ? ?0 ?00 ?.5 pulsed 10 ?.1 100 1 000 10 000 ? ?0 ?00 v gs = 0 f = 1 mhz 10 100 1000 ? ?0 ?00 v gs - gate to source voltage - v reverse recovery time vs. body diode current i f - diode current - a t rr - reverse recovery time - ns di/dt = 100 a/ s v gs = 0
1 ?.1 10 ? ?0 ?00 ?.0 ?.5 v dd = ?0 v v gs(on) = ?0 v r g = 10 ?
dynamic input/output characteristics q g - gate charge - nc v ds - drain to source voltage - v 0 10 20 30 40 ?0 ?0 ?0 ?0 ? ? ?2 ?6 0 0.10 0.20 0.15 v gs = ? v c iss v dd = ?6 v ?0 v ? v v gs v ds t d(off) t d(on) t r t f 1 000 100 i d = ?.8 a ?0 v v gs = ?0 v ? v v gs = 0 c oss c rss
6 p a1750 reference document name document no. nec semiconductor device reliability/quality control system tei-1202 quality grade on nec semiconductor devices iei-1209 semiconductor device mounting technology manual c10535e semiconductor device package manual c10943x guide to quality assurance for semiconductor devices mei-1202 semiconductor selection guide x10679e power mos fet features and application switching power supply tea-1034 application circuits using power mos fet tea-1035 safe operating area of power mos fet tea-1037
7 p a1750 [memo]
8 p a1750 no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: ?tandard? ?pecial? and ?pecific? the specific quality grade applies only to devices developed based on a customer designated ?uality assurance program?for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices in ?tandard?unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact nec sales representative in advance. anti-radioactive design is not implemented in this product. m4 94.11
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